24 September 1996 High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser
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Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251924
Event: Photonics China '96, 1996, Beijing, China
2.5 micrometers wide ridge waveguide laser emitting wavelength 980nm were described. The epitaxial structure was a step- index separate-confinement strained single quantum well heterostructure which was grown by MOCVD. About 150mW output power are achieved for 600 micrometers long laser.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jizhen Hua, Jizhen Hua, Xingguo Guan, Xingguo Guan, "High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251924; https://doi.org/10.1117/12.251924


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