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24 September 1996 High-power GRIN-SCH lasers with low-threshold-current density and high efficiency
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Proceedings Volume 2886, Semiconductor Lasers II; (1996)
Event: Photonics China '96, 1996, Beijing, China
In this letter, we report the MBE growth of GRIN-SCH ALGaAs single quantum well lasers. In order to obtain high quality laser materials, superlattice among GaAs buffer and n-AlGaAs cladding layer was incorporated. Reduced Be dopant concentration in the p-AlGaAs cladding layer near the GRIN region was adopted, which is believed to be benefit to the control of p-n junction places and reduction of the oxygen incorporation. High power broad-area lasers were fabricated. The typical threshold current density is 300A/cm2 and the minimum threshold current density is 220A/cm2 for the 500 micrometers cavity length lasers. High slope efficiency of 1.3W/A for 1000 micrometers cavity length lasers was obtained, recorded CW output power at room temperature has reached 2.3W. The measured characteristics temperature T(subscript 0$. is as high as 185K.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Donghai Zhu, Zhanguo Wang, Jiben Liang, Bo Xu, Zhanping Zhu, Jun Zhang, Qian Gong, Shengying Li, Zujie Fang, Yuzhen Tu, Bin Liu, Xiongwei Hu, Qin Han, and Caizheng Jin "High-power GRIN-SCH lasers with low-threshold-current density and high efficiency", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996);

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