24 September 1996 Intersubband lasing in silicon-based multiple quantum wells
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Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251876
Event: Photonics China '96, 1996, Beijing, China
Because of the absence of polar optical scattering, the lifetime difference of the upper and lower lasing levels, to which population inversion and laser gain are proportional, is an order of magnitude larger in silicon-based structures than in the III-Vs. Further enhancements are due to phonon confinement. For lasing wavelengths 10 micrometers and longer, GexSi1-x/Si is used. For operation at near infrared wavelengths, high barrier materials are needed. To avoid large operating voltages, designs are considered which rely on parallel rather than sequential operation.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory Sun, Gregory Sun, Jacob B. Khurgin, Jacob B. Khurgin, Lionel R. Friedman, Lionel R. Friedman, Richard A. Soref, Richard A. Soref, } "Intersubband lasing in silicon-based multiple quantum wells", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251876; https://doi.org/10.1117/12.251876

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