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24 September 1996 Investigation of quantum well lasers which have superlattice buffer layer
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Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251919
Event: Photonics China '96, 1996, Beijing, China
Abstract
Single quantum well AlGaAs/GaAs semiconductor lasers which have superlattice buffer layer have been fabricated by MBE. The experimental results how that the superlattice buffer layer can effectively bury the substrate defects and well interface can be achieved. The lasers can work continuously at room temperature, the operating wavelength is 780 +/- 2 nm and the lowest threshold current at room temperature is 30 mA, the output power with uncoated facets is greater than 20mW.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fuhou Zhang, Ke Song, Jianping Xing, Xiutian Hao, and YiPing Zeng "Investigation of quantum well lasers which have superlattice buffer layer", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251919
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