Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure

Zhongqi Pan; Yongzhen Huang; Rong Han Wu; Zengqi Zhou; Yaowang Ling; Qiming Wang

doi:10.1117/12.251902

24 September 1996 Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure

Zhongqi Pan, Yongzhen Huang, Rong Han Wu, Zengqi Zhou, Yaowang Ling, Qiming Wang

Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251902
Event: Photonics China '96, 1996, Beijing, China

Abstract

Based on the equivalent resistance and finite element method, the current distribution in active region is analyzed with current injection from ring electrode. To improve the injection efficiency and reduce the resistance of p-type DBR, we design reverse mesa structure and achieved low threshold current InGaAs vertical cavity surface emitting laser operation. In situ thickness monitoring and controlling in MBE growth is also studied.

Citation Download Citation

Zhongqi Pan, Yongzhen Huang, Rong Han Wu, Zengqi Zhou, Yaowang Ling, and Qiming Wang "Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251902

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