24 September 1996 Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure
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Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251902
Event: Photonics China '96, 1996, Beijing, China
Abstract
Based on the equivalent resistance and finite element method, the current distribution in active region is analyzed with current injection from ring electrode. To improve the injection efficiency and reduce the resistance of p-type DBR, we design reverse mesa structure and achieved low threshold current InGaAs vertical cavity surface emitting laser operation. In situ thickness monitoring and controlling in MBE growth is also studied.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhongqi Pan, Zhongqi Pan, Yongzhen Huang, Yongzhen Huang, Rong Han Wu, Rong Han Wu, Zengqi Zhou, Zengqi Zhou, Yaowang Ling, Yaowang Ling, Qiming Wang, Qiming Wang, } "Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251902; https://doi.org/10.1117/12.251902
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