Paper
24 September 1996 Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser
Lijun Wang, Sheng Li Wu, Jacqueline E. Diaz, Ivan Eliashevich, Hyuk Jong Yi, Manijeh Razeghi
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Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251910
Event: Photonics China '96, 1996, Beijing, China
Abstract
The operating characteristics of Al-free InGaAsP/GaAs separate confinement heterostructure single quantum well high power laser grown by low-pressure metalorganic chemical vapor deposition are reported. The internal differential quantum efficiency (eta) i is closed 98 percent. The external differential quantum efficiency (eta) d of 75 percent and characteristics temperature To of 146 degrees C are achieved, CW total output power both facets of 2.6 W single quantum well laser with 100 micrometers width, 1.1 mm cavity length is obtained. Threshold current density Jth, reciprocal differential quantum efficiency l/(eta) d, emission wavelength (lambda) and characteristics temperature To as function of laser cavity length L respectively have been measured and researched. Dependence of Jth (T), (lambda) (T), and (eta) d (T) respectively on temperature T have been given and explained.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lijun Wang, Sheng Li Wu, Jacqueline E. Diaz, Ivan Eliashevich, Hyuk Jong Yi, and Manijeh Razeghi "Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251910
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KEYWORDS
Quantum efficiency

Quantum wells

High power lasers

External quantum efficiency

Laser damage threshold

Continuous wave operation

Internal quantum efficiency

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