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24 September 1996 Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser
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Proceedings Volume 2886, Semiconductor Lasers II; (1996)
Event: Photonics China '96, 1996, Beijing, China
The operating characteristics of Al-free InGaAsP/GaAs separate confinement heterostructure single quantum well high power laser grown by low-pressure metalorganic chemical vapor deposition are reported. The internal differential quantum efficiency (eta) i is closed 98 percent. The external differential quantum efficiency (eta) d of 75 percent and characteristics temperature To of 146 degrees C are achieved, CW total output power both facets of 2.6 W single quantum well laser with 100 micrometers width, 1.1 mm cavity length is obtained. Threshold current density Jth, reciprocal differential quantum efficiency l/(eta) d, emission wavelength (lambda) and characteristics temperature To as function of laser cavity length L respectively have been measured and researched. Dependence of Jth (T), (lambda) (T), and (eta) d (T) respectively on temperature T have been given and explained.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lijun Wang, Sheng Li Wu, Jacqueline E. Diaz, Ivan Eliashevich, Hyuk Jong Yi, and Manijeh Razeghi "Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996);

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