24 September 1996 Semiconductor lasers in China
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Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251888
Event: Photonics China '96, 1996, Beijing, China
Abstract
This paper reviews the development of semiconductor lasers, especially the breakthrough on quantum well lasers in China. Regarding on the super thin material growth, the developing history of Molecular beam epitaxy and metalorganic chemical vapor deposition are briefly introduced. Taking some kinds of lasers as examples, the characteristics of long wavelength MQW F-P LD and MQW DFB LD, 808nm high power lasers and visible lasers are also demonstrated. The low dimension lasers including quantum wire and quantum dot are under way.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lianhui Chen, Lianhui Chen, } "Semiconductor lasers in China", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251888; https://doi.org/10.1117/12.251888
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