24 September 1996 Visible photo- and electro-luminescence from laser-crystallized a-Si:H and its based multilayers
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Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251893
Event: Photonics China '96, 1996, Beijing, China
We have reported for the first time on visible photoluminescence (PL) in crystallized a-Si:H/aSiNx:H multilayers structure by CW Ar ion laser annealing treatments. In this paper we present new results on visible PL and electroluminescence (EL) from crystallized a:SiH and its based multilayers by using KrF excimer pulse laser irradiating treatments. Strong and stable PL and EL have been observed by naked eye in both laser irradiated a-Si:H and a-Si:H/aSiNx:H multilayers samples at room temperature. The EL peak of crystallized a-Si:H/a-SiNx:H multilayers is blue shifted from 1.79 eV to 2.00 eV with narrowing the well layer thickness from 4 nm to 2 nm which suggests the origin of the light emission should be related to the quantum size effect.
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Kun-Ji Chen, Kun-Ji Chen, Wei Wu, Wei Wu, Xinfan Huang, Xinfan Huang, Zhifeng Li, Zhifeng Li, Mingxiang Wang, Mingxiang Wang, Jun Xu, Jun Xu, Wei Li, Wei Li, Duan Feng, Duan Feng, } "Visible photo- and electro-luminescence from laser-crystallized a-Si:H and its based multilayers", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); doi: 10.1117/12.251893; https://doi.org/10.1117/12.251893

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