30 September 1996 Excimer laser crystallization of hydrogenated amorphous silicon
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Abstract
Hydrogenated amorphous silicon films have been crystallized by the irradiations of XeCl excimer laser. The crystallized films have been examined by the use of scanning electron microscopy (SEM), x-ray diffraction (XRD) and conductivity measurements to clarify their morphologies, structure and electrical properties. The results show that a high conductive super thin layer is formed by a single pulse laser irradiation with the energy density of 75mJ/cm2. The conductivity increases quickly at laser energy density threshold which decreases when the hydrogen in a-Si:H films is removed by pre-annealing. During crystallization process, oxygen atoms from the air ambient have been introduced into the films and such an introducing process is hindered by the hydrogen eruption. When the oxygen content is high enough, the carrier-transport mechanism includes thermionic emission and thermionic field emission in the vicinity of room temperature, which is similar to semi-insulating polycrystalline silicon.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongbin Dai, Zhongyang Xu, Changan Wang, Shaoquiang Zhang, Chengwu An, Xingjiao Li, Xinheng Wan, Hui Ding, "Excimer laser crystallization of hydrogenated amorphous silicon", Proc. SPIE 2888, Laser Processing of Materials and Industrial Applications, (30 September 1996); doi: 10.1117/12.253126; https://doi.org/10.1117/12.253126
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