30 September 1996 Production of intense atomic nitrogen beam used for doping and synthesis of nitride film by pulsed laser ablation
Author Affiliations +
Proceedings Volume 2888, Laser Processing of Materials and Industrial Applications; (1996); doi: 10.1117/12.253118
Event: Photonics China '96, 1996, Beijing, China
Abstract
Intense atomic nitrogen beams have been produced by a novel arc-heated source for pulsed-laser-ablation deposition. The arc discharge has been carried in pure nitrogen gas and maintained stable in arc pressure of 30-300 Torr. The average beam kinetic energy changes with the arc pressure from 0.8 to 2 eV. Strong atomic emission lines in 383-433 nm spectral region indicated that the arc-heated source generated an appreciable flux of nitrogen atoms. Nitrogen atoms, rather than N2 molecules in the arc, have been considered as the most likely nitrogen-arc species responsible for doping and synthesis of nitride film such as CNx, ZnSe:N, GaN, etc.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ning Xu, Yuancheng Du, Zhifeng Ying, Zhongmin Ren, Fuming Li, "Production of intense atomic nitrogen beam used for doping and synthesis of nitride film by pulsed laser ablation", Proc. SPIE 2888, Laser Processing of Materials and Industrial Applications, (30 September 1996); doi: 10.1117/12.253118; https://doi.org/10.1117/12.253118
PROCEEDINGS
6 PAGES


SHARE
KEYWORDS
Nitrogen

Chemical species

Doping

Carbon

Laser ablation

Plasma

Molecules

Back to Top