30 September 1996 Study of Ti:sapphire layers created by PLD
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Abstract
Thin films of Ti:sapphire were fabricated by KrF laser ablation on (0001) and (1102) sapphire, on (001) quartz and on fused silica substrates from crystalline Ti:sapphire targets. Substrates were heated during the deposition at low temperatures or at high temperatures. Films luminescence, crystallinity, fluorescence lifetime, dopants content, waveguiding and surface morphology of created Ti:sapphire films were studied. Results are presented and discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Miroslav Jelinek, Miroslav Jelinek, Robert William Eason, Robert William Eason, Jan Lancok, Jan Lancok, Andrew A. Anderson, Andrew A. Anderson, Christos Grivas, Christos Grivas, Costas Fotakis, Costas Fotakis, Lubomir Jastrabik, Lubomir Jastrabik, Francois Flory, Francois Flory, } "Study of Ti:sapphire layers created by PLD", Proc. SPIE 2888, Laser Processing of Materials and Industrial Applications, (30 September 1996); doi: 10.1117/12.253103; https://doi.org/10.1117/12.253103
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