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30 September 1996 Laser inducement of Agricus bisporus I
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Abstract
Using different power, different dosage's He-Ne laser (632.8 nm) and semiconductor laser (805 nm) to irradiated mycelia of four Agricus bisporus strains. And using no irradiate strain as contrast. Picking out some mycelium from irradiation position and then transfer them into Potato Dextrose Agar culture medium, culturing 12 - 15 days. We use the polyacrylamide slab gel electrophoresis to examine the esterase (EST) isozymes of mycelium. We could find from the result that laser irradiating could not change the Rf of main bands (F&s zones) of mycelium EST. However, 20 mw He- Ne, 10 minutes irradiation could not only raise the activity of EST distinctly, but also increase the numbers of enzyme zone of M zone, the difference between the semiconductor irradiation of 140 mv, 10 minutes and 20 mv, 10 minutes are not remarkable. And the irradiating effect of He-Ne laser is better than that of semiconductor laser.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ning Mao, Rong Chen, and Zesheng Wang "Laser inducement of Agricus bisporus I", Proc. SPIE 2889, High-Power Lasers: Solid State, Gas, Excimer, and Other Advanced Lasers, (30 September 1996); https://doi.org/10.1117/12.253311
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