20 September 1996 Physical properties and optical recording performance of In47Sb14Te39 phase change thin films using 514.5-nm wavelength laser beam
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Abstract
Physical properties of In47Sb14Te39 thin films prepared by DC magnetron sputtering method are studied. X- ray diffraction and DSC results indicate that the crystallization compounds include mainly In3SbTe2 with small amounts of InTe, In2Te3. Optical recording test of the films state clearly that larger reflectivity contrast can be obtained at lower power Argon laser irradiation. The erasing contrast is comparatively lower but can be improved by multi-films match.
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Liqiu Q. Men, Liqiu Q. Men, Fusong S. Jiang, Fusong S. Jiang, Chao Liu, Chao Liu, Huiyong Liu, Huiyong Liu, Fuxi Gan, Fuxi Gan, "Physical properties and optical recording performance of In47Sb14Te39 phase change thin films using 514.5-nm wavelength laser beam", Proc. SPIE 2890, Optical Recording, Storage, and Retrieval Systems, (20 September 1996); doi: 10.1117/12.251980; https://doi.org/10.1117/12.251980
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