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30 September 1996 1 X 4 GaAs optical switch array with asymmetric X-junction
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Proceedings Volume 2891, Integrated Optoelectronics; (1996) https://doi.org/10.1117/12.253185
Event: Photonics China '96, 1996, Beijing, China
Abstract
In this paper, the asymmetric X-junction is applied in the GaAs Mach-Zehnder optical switch instead of the traditional Y-branch and a 1 X 4 switch array is designed and fabricated. The basic mechanism of the asymmetric X-junction is briefly narrated. The considerations for the device's designing and the fabrication process are also presented. The switch unit in this device operating at 1.15 micrometers has a switching voltage of 12 V and a crosstalk of less than -20 dB. The propagation loss in the waveguide of this device is about 7 dB/cm.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jianyi Yang, Hao Feng, Weiqin Zhou, Qiang Zhou, and Minghua Wang "1 X 4 GaAs optical switch array with asymmetric X-junction", Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); https://doi.org/10.1117/12.253185
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