1.3-um and 1.55-um InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence

Xiaoyu Ma; Shutang Wang; Feike Xiong; Liang Guo; Zhongming Wang; Lingjuan Zhao; Liming Wang; Lianhui Chen

doi:10.1117/12.253186

30 September 1996 1.3-um and 1.55-um InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence

Xiaoyu Ma, Shutang Wang, Feike Xiong, Liang Guo, Zhongming Wang, Lingjuan Zhao, Liming Wang, Lianhui Chen

Proceedings Volume 2891, Integrated Optoelectronics; (1996) https://doi.org/10.1117/12.253186
Event: Photonics China '96, 1996, Beijing, China

Abstract

1.3 micrometers and 1.55 micrometers InGaAsP/InP quantum well (QW) light emitting diodes (LEDs) with narrow beam divergence grown by low pressure metal organic chemical vapor deposition are reported in this paper. 1.3 micrometers and 1.55 micrometers QW LEDs with beam divergence of 30 - 45 degree, chip output power of more than 300 (mu) W and 200 (mu) W, and single mode fiber output power of 60 (mu) W and 40 (mu) W were obtained by optimizing the device structure parameters.

Citation Download Citation

Xiaoyu Ma, Shutang Wang, Feike Xiong, Liang Guo, Zhongming Wang, Lingjuan Zhao, Liming Wang, and Lianhui Chen "1.3-um and 1.55-um InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence", Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); https://doi.org/10.1117/12.253186

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