30 September 1996 Femtosecond studies on the optical-induced refractive index change in GaAs film
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Proceedings Volume 2891, Integrated Optoelectronics; (1996) https://doi.org/10.1117/12.253191
Event: Photonics China '96, 1996, Beijing, China
Abstract
The dynamics of the optical induced refractive index change and the absorption change in GaAs film is studied using femtosecond transmission and reflection spectroscopy. A rapid variation of the optical induced refractive index and an increased optical induced absorption are observed. These phenomena are interpreted with the band filling and the bandgap shrinking effect of the excited carriers.
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Fei-Peng Pi, Fei-Peng Pi, Weizhu Lin, Weizhu Lin, Dang Mo, Dang Mo, } "Femtosecond studies on the optical-induced refractive index change in GaAs film", Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); doi: 10.1117/12.253191; https://doi.org/10.1117/12.253191
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