30 September 1996 GaAs/GaAlAs multiple quantum well electroreflectance modulators
Author Affiliations +
Proceedings Volume 2891, Integrated Optoelectronics; (1996) https://doi.org/10.1117/12.253173
Event: Photonics China '96, 1996, Beijing, China
In this paper, physical analyses on the characterization of the electroreflectance modulator are concerned, which include quantum confined Stark effect and asymmetric Fabry- Perot cavity effect and so on. Experimental results are provided to demonstrate the properties of normally-off and normally-on devices. The developed technology is used to tune the mode to the proper position to improve the contrast ratio of modulators.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongda Chen, Hongda Chen, Zhibiao Chen, Zhibiao Chen, Wen Gao, Wen Gao, Rong Han Wu, Rong Han Wu, } "GaAs/GaAlAs multiple quantum well electroreflectance modulators", Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); doi: 10.1117/12.253173; https://doi.org/10.1117/12.253173

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