High-performance 1.3-um and 1.55-um InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD

Xiaoyu Ma; Shutang Wang; Feike Xiong; Liang Guo; Zhongming Wang; Liming Wang; Xiaoyan Zhang; Guoxi Sun; Caihong Xia; Tian Zhu; Yali Yang; Hongqin Zhang; Guangping He; Shuqin Yao; Kekui Bi; Lianhui Chen

doi:10.1117/12.253174

30 September 1996 High-performance 1.3-um and 1.55-um InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD

Xiaoyu Ma, Shutang Wang, Feike Xiong, Liang Guo, Zhongming Wang, Liming Wang, Xiaoyan Zhang, Guoxi Sun, Caihong Xia, Tian Zhu, Yali Yang, Hongqin Zhang, Guangping He, Shuqin Yao, Kekui Bi, Lianhui Chen

Author Affiliations +

Proceedings Volume 2891, Integrated Optoelectronics; (1996) https://doi.org/10.1117/12.253174
Event: Photonics China '96, 1996, Beijing, China

Abstract

High performance 1.3 micrometers and 1.55 micrometers InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition are reported in this paper. 1.3 micrometers SL-QW lasers and 1.55 micrometers SL-QW lasers with broad area threshold current densities as low as 400 A/cm² and 450 A/cm² (at cavity length 400 micrometers ), DC-PBH stripe device threshold currents of 5 approximately 10 mA and 6 approximately 10 mA were obtained, respectively. The prediction life time of 1.3 micrometers SL-QW lasers is more than 10⁶ hrs at 25 degree(s)C, and degeneration activated energy is 0.682 eV according to the accelerate aging tests.

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Xiaoyu Ma, Shutang Wang, Feike Xiong, Liang Guo, Zhongming Wang, Liming Wang, Xiaoyan Zhang, Guoxi Sun, Caihong Xia, Tian Zhu, Yali Yang, Hongqin Zhang, Guangping He, Shuqin Yao, Kekui Bi, and Lianhui Chen "High-performance 1.3-um and 1.55-um InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD", Proc. SPIE 2891, Integrated Optoelectronics, (30 September 1996); https://doi.org/10.1117/12.253174

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