30 September 1996 MIM thin film diode with excellent switching characteristics for LCD
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Proceedings Volume 2892, Display Devices and Systems; (1996) https://doi.org/10.1117/12.253367
Event: Photonics China '96, 1996, Beijing, China
Abstract
A Ta-Ta2O5-Ta MIM thin film diode for active-matrix LCD is described. The Ta2O5 thin film insulator layer of the MIM thin film diode were formed by anodizing sputtered tantalum oxide films (sputtering/anodization two- step process). Experimental results showed that the MIM diode using the two-step oxidized sputtered/anodized tantalum oxide films had the threshold voltage as low as 5 V, the switching-on/off ratio about 105, and a more symmetrical I-V characteristic.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huifen Huang, Huifen Huang, Daming Zhuang, Daming Zhuang, Yunfen Liu, Yunfen Liu, Minji Zhu, Minji Zhu, Haokang Zhang, Haokang Zhang, Guoping Chen, Guoping Chen, } "MIM thin film diode with excellent switching characteristics for LCD", Proc. SPIE 2892, Display Devices and Systems, (30 September 1996); doi: 10.1117/12.253367; https://doi.org/10.1117/12.253367
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