30 September 1996 Preparation of silicon-based field emission materials
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Proceedings Volume 2892, Display Devices and Systems; (1996); doi: 10.1117/12.253350
Event: Photonics China '96, 1996, Beijing, China
Abstract
The tip arrays on (100) oriented silicon were fabricated, and diamond films were deposited on the tip arrays by MW- PCVD method. The diamond was preferentially grown on the top of tips, and diamond film with (111) orientation was formed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guang Yuan, Young-Hyun Jin, C. Jin, Bin Zhang, Hee Chun Song, Yongqiang Ning, T. Zhou, H. Jiang, Sijia Li, Ying Tian, C. Gu, "Preparation of silicon-based field emission materials", Proc. SPIE 2892, Display Devices and Systems, (30 September 1996); doi: 10.1117/12.253350; https://doi.org/10.1117/12.253350
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KEYWORDS
Diamond

Silicon

Silicon films

Electrons

Chemisorption

Coating

Diffraction

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