25 September 1996 Bridgman growth and assessment of CdTe and Cd1-yZnyTe crystals
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In order to meet with the epitaxial growth of large area Hg1-xCdxTe (MCT) with various compositions for infrared focal plane arrays, CdTe and Cd1-yZnyTe (y equals 0.020, 0.025 and 0.040 for various x) crystals with 120 mm length and 20 - 40 mm diameter have been successfully synthesized and grown by the vertical Bridgman method. These crystals were grown unseededly or seededly and free of any macroscopic defects e.g. micro-cave and crackles. Wafers with areas from 12 X 18 mm2 to 30 X 35 mm2 in the <111> orientation have been obtained from large grain of the ingot. Effects of changing the ampoule base shape upon the crystal growth have also been investigated. A necked ampoule bottom is preferred to ones employing seeding. Assessments of the samples have included infrared transmission (range 2.4 - 24 micrometers ), etch pit density, X-ray photography and three-crystal rocking curve measurement. Good quality MCT epitaxial films (areas of 12 X 18 mm2 and 20 X 20 mm2), as demonstrated by good surface topography, electrical parameters, have been grown by liquid phase epitaxy and metal organic chemical vapor epitaxy onto CdTe(CT) and Cd1-yZnyTe(CZT) substrate materials produced in our study.
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Yu Long Mo, Yu Long Mo, Quanling Yue, Quanling Yue, Chaowang Liu, Chaowang Liu, Hua Chen, Hua Chen, Gang Wu, Gang Wu, "Bridgman growth and assessment of CdTe and Cd1-yZnyTe crystals", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); doi: 10.1117/12.252117; https://doi.org/10.1117/12.252117

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