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25 September 1996 Influence of growth conditions on the qualities of CdxHg1-xTe (0 x 1) layers grown by MOVPE
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We report the influence of growth conditions on the qualities of CdTe, HgTe and HgCdTe layers grown by MOVPE, CdTe and HgTe layers were grown onto 2 degree(s)(100)GaAs substrates. HgCdTe layers were grown onto hybrid substrates 2 degree(s)(100)CdTe/GaAs with 3 micrometers buffers using interdiffused multilayer process. Surface morphology and compositional uniformity of HgCdTe layers have been investigated. Although the growth conditions have not been optimized, the layers have smooth and specular surface with remarkable featureless except some occasions with elongated hexagonal features. The morphology is sensitive to slight variations of concentrations of reactants, and (100)CdTe/(100)GaAs layers can be grown in a narrow range at Cd-rich conditions. Compositional uniformity of (Delta) x equals +/- 0.005 mol.CdTe over 1 cm2 area of HgCdTe layers have been reached for both LWIR and MWIR material. The grown layers can be p- or n-type, depending upon the buffer thickness, Hg concentrations during growth and postgrowth treatment and the substrate temperatures.
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Chaowang Liu, Bingwen Song, Yue Wang, Jingyu Wang, and Yu Long Mo "Influence of growth conditions on the qualities of CdxHg1-xTe (0 x 1) layers grown by MOVPE", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996);


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