Interface properties of HgCdTe passivated with the combination of CdS and ZnS

Gehong Zeng; Jingshao Zhang; Tianzhu Shen

doi:10.1117/12.252086

25 September 1996 Interface properties of HgCdTe passivated with the combination of CdS and ZnS

Gehong Zeng, Jingshao Zhang, Tianzhu Shen

Proceedings Volume 2894, Detectors, Focal Plane Arrays, and Applications; (1996) https://doi.org/10.1117/12.252086
Event: Photonics China '96, 1996, Beijing, China

Abstract

The process for forming CdS and ZnS films on n and p type of HgCdTe with x - 0.218 in aqueous sulfide solutions is described. The XPS analysis was carried out and photodiodes passivated with deferent thickness of sulfide were fabricated to assess the validity of the procedure. The results indicate that the native sulfide layers formed in this way show almost the same properties as those grown in nonaqueous solutions.

Citation Download Citation

Gehong Zeng, Jingshao Zhang, and Tianzhu Shen "Interface properties of HgCdTe passivated with the combination of CdS and ZnS", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); https://doi.org/10.1117/12.252086

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