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25 September 1996 Study of GaAs/GaAlAs infrared photodectors with novel characteristics
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A new type of GaAs/GaAlAs infrared photodetectors based on a new physics mechanism has been designed. Its simulation, manufacture, experiment measurements and analyses have been performed. Some novel important characteristics are obtained which are compared with the conventional GaAs/GaAlAs quantum well infrared photodetectors, such as, its low dark current, large absorption bandwidth, high response speed, low noise, and the choice of suitable operation bias. From our elementary work, the novel features of this kind of device will be very attractive in the application.
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Chun-Xia Du, Jun Deng, Qun Li, Rui Kong, Dong-Feng Wang, Chen Xu, Guangdi Shen, and Jie Yin "Study of GaAs/GaAlAs infrared photodectors with novel characteristics", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996);

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