25 September 1996 Surface pretreatment of LPE HgCdTe epilayer for passivation technology of photodiode array
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Proceedings Volume 2894, Detectors, Focal Plane Arrays, and Applications; (1996); doi: 10.1117/12.252122
Event: Photonics China '96, 1996, Beijing, China
Abstract
A new surface pretreating method of the LPE HgCdTe surface involves three steps. The state of the surface before and after the pre-treatment process has been investigated by Scanning Electron Microscopy and X-ray Photoelectron Spectroscopy. The treated surface following the processes is compared to the untreated surface. The results show the Electron Channel Pattern and morphology of the treated surface are better than that of the untreated surface. The optical and electrical parameters of before and after the treated epilayers have not changed. The oxides and contaminants have been reduced and eliminated. The photodiode arrays with good performance have been fabricated on the LPE HgCdTe which is treated as the described approach. The experimental results indicate that the appropriate surface pre-treatment is an important part of the photodiode array technology.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Li, Song He, "Surface pretreatment of LPE HgCdTe epilayer for passivation technology of photodiode array", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); doi: 10.1117/12.252122; https://doi.org/10.1117/12.252122
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KEYWORDS
Liquid phase epitaxy

Mercury cadmium telluride

Oxides

Photodiodes

Tellurium

Scanning electron microscopy

X-rays

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