Paper
30 September 1996 Photorefractive AlGaAs/GaAs multiple quantum well structures: growth and optical studies
W. Feng, Zhiguo Zhang, Y. Yu, Q. Huang, J. M. Zhou, Panming Fu
Author Affiliations +
Proceedings Volume 2896, Photorefractive Materials; (1996) https://doi.org/10.1117/12.253223
Event: Photonics China '96, 1996, Beijing, China
Abstract
We report the growth of photorefractive AlGaAs/GaAs multiple quantum well (MQW) structures by molecular beam epitaxy at low temperatures (LT). The LT MQW materials are semi- insulating as-grown. The AsGa-related defects incorporated into the LT materials during low temperature growth provide the required deep centers for photorefractive applications. We have investigated the effect of growth conditions on optical properties of LT MQW structures. Under optimized growth condition, MQW structures have been grown semi-insulating while retaining high optical quality. The strong electro-optic effects were observed near excitonic absorption edge. The photorefractive wave mixing in AlGaAs/GaAs MQW structures was performed under Frenz-Keldysh geometry. An output diffraction efficiency higher than 0.84% and a two-wave-mixing gain more than 3000 cm-1 have been obtained under dc electric field of 15 kv/cm.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Feng, Zhiguo Zhang, Y. Yu, Q. Huang, J. M. Zhou, and Panming Fu "Photorefractive AlGaAs/GaAs multiple quantum well structures: growth and optical studies", Proc. SPIE 2896, Photorefractive Materials, (30 September 1996); https://doi.org/10.1117/12.253223
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KEYWORDS
Diffraction

Absorption

Quantum wells

Diffraction gratings

Gallium arsenide

Molecular beam epitaxy

Refractive index

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