3 October 1996 Burstein shift and UV photoresponse in IBAD-deposited transparent conducting ZnO films
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Proceedings Volume 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications; (1996); doi: 10.1117/12.252934
Event: Photonics China '96, 1996, Beijing, China
Abstract
A Burstein-Moss shift has been observed in highly transparent conducting zinc oxide (ZnO) films prepared by ion-beam assisted reactive deposition (IBAD). The optical gaps ranged from 3.27 to 4.1 eV increase with an increase in film conductivities and carrier concentrations. An over 773 K annealing reduces conductivities by several orders of magnitude and subsequently narrows the optical gaps from 3.41 to 3.24 eV. When the films are irradiated with a UV light, they exhibit some photoresponse. The observed UV photoresponse can be interpreted using oxygen photodesorption and chemisorption at the surface.
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Deheng Zhang, Ruwei Gao, Honglei Ma, "Burstein shift and UV photoresponse in IBAD-deposited transparent conducting ZnO films", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252934; https://doi.org/10.1117/12.252934
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KEYWORDS
Zinc oxide

Transparent conducting films

Annealing

Ultraviolet radiation

Oxygen

Zinc

Absorption

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