3 October 1996 Effects of stoichiometry in semi-insulating GaAs on optoelectronic devices
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Abstract
The influences of point defects, dislocations, and precipitates on the lattice parameter of undoped semi- insulating GaAs single crystals were analyzed. It was shown that dislocations in such crystals serve as effective gettering sites for As interstitials due to the deformation energy of dislocations. The lattice parameters of these dislocated regions remain relatively constant due to the counterbalance between lattice compression and dilation around the dislocation. Regions away from dislocations show a linear dependence of lattice parameter with As interstitial concentration. Measurements of the lattice parameter in these latter regions by the nondestructive measurement of stoichiometry technique can be used to determine As interstitial concentrations. The nonuniformity in semi-insulating GaAs results in the variation in the threshold voltages of corresponding devices.
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NuoFu Chen, Hongjia He, Yutian Wang, Lanying Lin, "Effects of stoichiometry in semi-insulating GaAs on optoelectronic devices", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252942; https://doi.org/10.1117/12.252942
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