3 October 1996 Modified vertical Bridgman technique for GaAs crystal growth
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Abstract
In the present work, a modified vertical Bridgman technique for GaAs crystal is developed. The VB configuration in prototype includes a quartz ampoule and a quartz crucible. The quartz ampoule was sealed in order to prevent volatilization of components. Because the decomposition pressure of GaAs ia about 1 atm. at its melting point, the quartz ampoule can keep its shape under 1300 degrees Celsius in air atmosphere during GaAs growth. Seeded 25 mm diameter crystals are grown at the rate of about 0.1 - 0.6 mm/hr under the temperature gradient about 10 degrees Celsius/cm at the solid-liquid interface, and electrical properties of as-grown GaAs crystal are discussed.
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Jiayue Xu, Renying Sun, Shiji Fan, Guangyu Zhang, "Modified vertical Bridgman technique for GaAs crystal growth", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252979; https://doi.org/10.1117/12.252979
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