X-ray diffraction analysis of self-organized InAs quantum dots

Yan Zhuang; Y.T. Wang; W.Q. Ma; W. Wang; X.P Yang; Zhige Chen; D.S. Jiang; H.Z. Zheng

doi:10.1117/12.252939

3 October 1996 X-ray diffraction analysis of self-organized InAs quantum dots

Yan Zhuang, Y.T. Wang, W.Q. Ma, W. Wang, X.P Yang, Zhige Chen, D.S. Jiang, H.Z. Zheng

Proceedings Volume 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications; (1996) https://doi.org/10.1117/12.252939
Event: Photonics China '96, 1996, Beijing, China

Abstract

A series sample of GaAs/InAs/GaAs was studied by double crystal x-ray diffraction and the investigation based on the x-ray dynamical theory was used to analyze the x-ray diffraction results. As the thickness of InAs layer exceeded 1.7 monolayer, 3-dimensional InAs islands occurred. Pendellosung fringes were shift. A multilayer structure model is proposed to describe the strain status in the InAs islands and the sample and a good agreement is obtained between the experimental and theoretical curves.

Citation Download Citation

Yan Zhuang, Y.T. Wang, W.Q. Ma, W. Wang, X.P Yang, Zhige Chen, D.S. Jiang, and H.Z. Zheng "X-ray diffraction analysis of self-organized InAs quantum dots", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); https://doi.org/10.1117/12.252939

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available