3 October 1996 X-ray diffraction analysis of self-organized InAs quantum dots
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Abstract
A series sample of GaAs/InAs/GaAs was studied by double crystal x-ray diffraction and the investigation based on the x-ray dynamical theory was used to analyze the x-ray diffraction results. As the thickness of InAs layer exceeded 1.7 monolayer, 3-dimensional InAs islands occurred. Pendellosung fringes were shift. A multilayer structure model is proposed to describe the strain status in the InAs islands and the sample and a good agreement is obtained between the experimental and theoretical curves.
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Yan Zhuang, Y.T. Wang, W.Q. Ma, W. Wang, X.P Yang, Zhige Chen, D.S. Jiang, H.Z. Zheng, "X-ray diffraction analysis of self-organized InAs quantum dots", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252939; https://doi.org/10.1117/12.252939
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