3 October 1996 X-ray diffraction analysis of self-organized InAs quantum dots
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A series sample of GaAs/InAs/GaAs was studied by double crystal x-ray diffraction and the investigation based on the x-ray dynamical theory was used to analyze the x-ray diffraction results. As the thickness of InAs layer exceeded 1.7 monolayer, 3-dimensional InAs islands occurred. Pendellosung fringes were shift. A multilayer structure model is proposed to describe the strain status in the InAs islands and the sample and a good agreement is obtained between the experimental and theoretical curves.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yan Zhuang, Yan Zhuang, Y.T. Wang, Y.T. Wang, W.Q. Ma, W.Q. Ma, W. Wang, W. Wang, X.P Yang, X.P Yang, Zhige Chen, Zhige Chen, D.S. Jiang, D.S. Jiang, H.Z. Zheng, H.Z. Zheng, "X-ray diffraction analysis of self-organized InAs quantum dots", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252939; https://doi.org/10.1117/12.252939

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