3 October 1996 Zn1-xCdxSe/ZnSe multiple quantum well photomodulators
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Abstract
ZnCdSe/ZnSe multiple quantum well (MQW) transmission and reflection photomodulators operating at room temperature were fabricated employing quantum-confined Stark effect on the exciton absorption. Samples were grown on p-type GaAs substrates by MBE with an i-Zn0.87Cd0.13Se/ZnSe MQW heterostructure sandwiched by a ZnSe p-n junction. The transmission modulator was constructed with a Zn0.87Cd0.13Se/ZnSe MQW glued onto a piece of ITO film-covered glass with silver paste and epoxy. To avoid absorption in GaAs substrates, a window with a diameter of about 2 mm was opened using a selective etch. For the reflective use an Al mirror was deposited on the glass back surface, the device then operates in reflection with the light to be modulated making a double pass through the active quantum well region, thereby increasing the modulation amplitude. Measurement results are given in this paper for transmission, reflection, differential transmission, differential absorption, and differential reflection as a function of the incident photon wavelength and the applied field.
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Jiuyao Tang, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita, "Zn1-xCdxSe/ZnSe multiple quantum well photomodulators", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); doi: 10.1117/12.252945; https://doi.org/10.1117/12.252945
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