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30 January 1997 Integrated optoelectronic devices by selective-area epitaxy
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The development of a simulation model for selective-area epitaxy and the fabrication of semiconductor lasers monolithically integrated with electroabsorption modulators by this technique are presented. Diffusion equations and boundary conditions from selective-area MOCVD theory are applied in a computational model to predict column III reactant concentrations, and self-consistent solutions for reaction parameters are found using the finite element method. Data are presented to demonstrate accurate predictions of the thickness and composition of selectively grown ternary InGaAs quantum wells. This model was utilized to design the selective growth mask for Fabry-Perot lasers integrated with intracavity electroabsorption modulators. These devices, with modulator lengths of 290, 620, and 1020 micrometer, exhibit cw threshold currents of 9, 7.5, and 7.5 mA, respectively. Also, extinction ratios of 16.5, 19.5, and 20.5 dB, respectively, are measured at a modulator reverse bias of 2 V. Distributed Bragg reflector lasers with monolithically integrated external cavity modulators are also fabricated, and the selective-area MOCVD simulation was employed to design the growth mask dimensions and the location of the gratings. Cw threshold currents of 10.5 mA, slope efficiencies of 0.21 W/A, and extinction ratios of 18 dB at a modulator reverse bias of 1.0 V are achieved for these devices.
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A. M. Jones and James J. Coleman "Integrated optoelectronic devices by selective-area epitaxy", Proc. SPIE 2918, Emerging Components and Technologies for All-Optical Photonic Systems II, (30 January 1997);

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