30 January 1997 Monolithic integration of MQW wavelength tunable DBR lasers with external cavity electroabsorption modulators by selective-area MOCVD
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Proceedings Volume 2918, Emerging Components and Technologies for All-Optical Photonic Systems II; (1997); doi: 10.1117/12.265362
Event: Photonics East '96, 1996, Boston, MA, United States
Abstract
The design and operation of multiple-quantum well (MQW) wavelength tunable distributed Bragg reflector (DBR) lasers with nonabsorbing gratings and monolithically integrated external cavity electroabsorption modulators fabricated by selective-area metal-organic chemical vapor deposition (MOCVD) are presented. Uncoated devices exhibit cw threshold currents as low as 10.5 mA with slope efficiencies of 0.21 W/A from the laser facet and 0.06 W/A from the modulator facet. After the application of facet coatings, slope efficiencies from the modulator facet increase to 0.14 W/A. Wavelength tuning of 7 nm is obtained by injection current heating of the DBR section. These devices exhibit extinction ratios of 18 dB from the modulator facet at a low modulator bias of 1 V, when measured with a broad-area detector. When coupled to a singlemode fiber, these devices exhibit high extinction ratios of 40 dB at a modulator bias of 1.25 V. Photo-generated current versus optical power plots indicate that the extinction ratios are not limited by carrier build- up in the modulator quantum wells.
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Robert M. Lammert, Gary M. Smith, J. S. Hughes, Mark L. Osowski, A. M. Jones, James J. Coleman, "Monolithic integration of MQW wavelength tunable DBR lasers with external cavity electroabsorption modulators by selective-area MOCVD", Proc. SPIE 2918, Emerging Components and Technologies for All-Optical Photonic Systems II, (30 January 1997); doi: 10.1117/12.265362; https://doi.org/10.1117/12.265362
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KEYWORDS
Modulators

Continuous wave operation

Quantum wells

Tunable lasers

Metalorganic chemical vapor deposition

Sensors

Silicon

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