Paper
20 March 1997 Evaluation of thin film by chemical vapor deposition using x-ray diffraction
J. T. Oh, Peter Hing, H. S. Fong
Author Affiliations +
Proceedings Volume 2921, International Conference on Experimental Mechanics: Advances and Applications; (1997) https://doi.org/10.1117/12.269860
Event: International Conference on Experimental Mechanics: Advances and Applications, 1996, Singapore, Singapore
Abstract
X-ray diffraction techniques are increasingly being used for the evaluation of thin film in the microelectronics industries. The techniques use low angle scanning with an X- ray diffractometer. It is capable of determining the structure of the thin film material and its thickness on the substrate. X-ray diffraction techniques on thin film has the advantage over transmission electron microscopy that requires elaborate sample preparation which is time consuming, difficult and artefacts are often introduced during ion milling. In X-ray diffraction, the coated sample can be used without preparation. This paper discusses some recent advances in X- ray diffraction of thin films using parallel incident beam with a wide angle goniometer and a thin film attachment. It also discusses the results obtained on four materials coated with a thin film by chemical vapor deposition.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. T. Oh, Peter Hing, and H. S. Fong "Evaluation of thin film by chemical vapor deposition using x-ray diffraction", Proc. SPIE 2921, International Conference on Experimental Mechanics: Advances and Applications, (20 March 1997); https://doi.org/10.1117/12.269860
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KEYWORDS
Thin films

Diffraction

X-ray diffraction

X-rays

Silicon carbide

Silicon

Crystals

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