Dynamic properties of a Ge-Sb-Te-based optical disk at 680nm

Fusong S. Jiang; Chao Liu; Liqiu Q. Men; Huiyong Liu

doi:10.1117/12.248708

3 September 1996 Dynamic properties of a GeSbTe-based optical disk at 680nm

Fusong S. Jiang, Chao Liu, Liqiu Q. Men, Huiyong Liu

Proceedings Volume 2931, Fourth International Symposium on Optical Storage (ISOS '96); (1996) https://doi.org/10.1117/12.248708
Event: Fourth International Symposium on Optical Storage, 1996, Shenzhen, Guangdong Province, China

Abstract

The dynamic properties of a Ge-Sb-Te phase-change optical disk with low writing power (5 - 13 mw) at 680 nm were investigated. The Carrier/Noise of the disk is about 45 approximately 60 dB and the Erase ratio is 23 approximately 28 dB.

Citation Download Citation

Fusong S. Jiang, Chao Liu, Liqiu Q. Men, and Huiyong Liu "Dynamic properties of a GeSbTe-based optical disk at 680nm", Proc. SPIE 2931, Fourth International Symposium on Optical Storage (ISOS '96), (3 September 1996); https://doi.org/10.1117/12.248708

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available