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19 December 1996 Color-sensitive photodetectors in standard CMOS and BiCMOS technologies
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Proceedings Volume 2950, Advanced Focal Plane Arrays and Electronic Cameras; (1996) https://doi.org/10.1117/12.262515
Event: Advanced Imaging and Network Technologies, 1996, Berlin, Germany
Abstract
The authors present a novel technique for color detection by using a buried double pn junction (B.D.J.) and a buried triple pn junction (B.T.J.) structure. For the B.D.J. wavelength-dependent photocurrents I1 and I2 can be measured. The wavelength of monochromatic incident light can be identified from the ratio I2/I1. In the case of the B.T.J. with wavelength dependent photocurrents the three colorimetric components of the incident light can be extracted. These structures can be implemented in standard CMOS and BiCMOS technology respectively.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohamed Ben Chouikha, Guo Neng Lu, Mohamed Sedjil, and Gerard Sou "Color-sensitive photodetectors in standard CMOS and BiCMOS technologies", Proc. SPIE 2950, Advanced Focal Plane Arrays and Electronic Cameras, (19 December 1996); https://doi.org/10.1117/12.262515
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