19 December 1996 Recent experimental results from a CMOS active pixel image sensor with photodiode and photogate pixels
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Proceedings Volume 2950, Advanced Focal Plane Arrays and Electronic Cameras; (1996) https://doi.org/10.1117/12.262533
Event: Advanced Imaging and Network Technologies, 1996, Berlin, Germany
Abstract
An APS test circuit including three 32 by 32 arrays with photodiode and photogate pixels has been developed using a 1.2 micrometer double-layer polysilicon double-layer metal CMOS process. The first experimental results have been published in the Aerosense conference in Orlando (April 1996). In this paper we present the latest experimental results including radiation hardness, quantum efficiency and spot scan pixel sensitivity.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johannes Solhusvik, Johannes Solhusvik, Cyril Cavadore, Cyril Cavadore, F. X. Audoux, F. X. Audoux, N. Verdier, N. Verdier, Jean A. Farre, Jean A. Farre, Olivier Saint-Pe, Olivier Saint-Pe, Robert Davancens, Robert Davancens, J. P. David, J. P. David, } "Recent experimental results from a CMOS active pixel image sensor with photodiode and photogate pixels", Proc. SPIE 2950, Advanced Focal Plane Arrays and Electronic Cameras, (19 December 1996); doi: 10.1117/12.262533; https://doi.org/10.1117/12.262533
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