13 May 1997 Nano absorbing centers: a key point in the laser damage of thin films
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In order to investigate a possible origin of absorbing centers responsible for laser damage of thin films in the UV, the laser-induced damage threshold of metal implanted bare SiO2 substrates is studied. Post-implantation thermal annealing of the samples is associated with a large change in the laser damage morphology, a decrease of the absorption at 355 nm as well as a decrease in the measured threshold values compared with non-annealed samples. All these phenomena are understood considering that nanoclusters of metals are produced during annealing. Such clustering is very likely to occur due to the thermodynamical properties of the metal dielectric system. The same behavior observed on thin films enables the proposition to be made that the same kind of clusters exist on thin films before any post- deposition process.
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Jean DiJon, Jean DiJon, T. Poiroux, T. Poiroux, C. Desrumaux, C. Desrumaux, } "Nano absorbing centers: a key point in the laser damage of thin films", Proc. SPIE 2966, Laser-Induced Damage in Optical Materials: 1996, (13 May 1997); doi: 10.1117/12.274229; https://doi.org/10.1117/12.274229

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