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4 February 1997 Femtosecond photoelectron spectroscopy of II-VI and III-V semiconductors
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Proceedings Volume 2967, Optical Inorganic Dielectric Materials and Devices; (1997)
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia
Photoelectron spectra resulting from sequential or simultaneous absorption of two or three photons have been studied for ZnTe(110), ZnSe(110), and GaP(110) surfaces, with time resolution of the relaxation of carriers between the first and subsequent steps of excitation. Under 2.95 eV excitation and probing with 5.9 eV photons on ZnTe(110), we were able to follow the thermalization of conduction electrons, the subsequent trapping of electrons by surface defect states in the band gap, and the gradual relaxation toward defect states closer to the Fermi level. On GaP(110), the relaxation of photoexcited electrons and holes was studied by means of two-photon and three-photon photoelectron emission under 3.16 eV photon excitation.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Leblans, R. K. R. Thoma, J. L. LoPresti, Michael Reichling, and Richard T. Williams "Femtosecond photoelectron spectroscopy of II-VI and III-V semiconductors", Proc. SPIE 2967, Optical Inorganic Dielectric Materials and Devices, (4 February 1997);

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