4 February 1997 Joining of semiconductive n-BaTiO3 with Si single-crystal, electrical, and optical properties
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Proceedings Volume 2967, Optical Inorganic Dielectric Materials and Devices; (1997) https://doi.org/10.1117/12.266531
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia
Abstract
Semiconductive n-BaTiO3 film on Si single crystal (100) was studied on the electrical optical properties by solar beam and its simulator. The film was spin-coated on the Si with a buffer layer in which Pt or Ceramace G (commercial name -- SnO and Sb2O3 as the base materials) was employed. The electrode Pt or Ceramace G was put on the film as the top one and Ag for the lower one. The temperature for joining of the film and Si were 700, 800 and 1000 degrees Celsius. The solar beam irradiated on the film to measure the photovoltage and photocurrent and also transmittance of the film on the glass was investigated. Furthermore, the interfaces between n-BaTiO3 film and Si were discussed by the results of electron probe microanalyzer and the microstructures were also reported.
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S. Sugihara, T. Andoh, S. Suzuki, "Joining of semiconductive n-BaTiO3 with Si single-crystal, electrical, and optical properties", Proc. SPIE 2967, Optical Inorganic Dielectric Materials and Devices, (4 February 1997); doi: 10.1117/12.266531; https://doi.org/10.1117/12.266531
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