4 February 1997 Mechano-activated processes on metal oxide interfaces at room temperature
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Proceedings Volume 2967, Optical Inorganic Dielectric Materials and Devices; (1997) https://doi.org/10.1117/12.266522
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia
Abstract
Solid state bonding of metal with oxide at room temperature have been studied. The properties of Al/SiO2, Al/glass, Al/MgO, Mg/SiO2, In/glass interfaces as well as to ascertain the mechanism of formation of interfaces. Structure, composition and mechanical properties were investigated using auger-spectroscopy (AES), secondary-ion mass-spectrometry (SIMS), electron microscopy and precision microindentation. The results showed marked adhesion not all over contact area but only at zones of the maximum shear stress. The effect of mechanoactivation is considered from the viewpoints of both structure formation and physico- chemical interaction of nonequilibrium systems. As a result of relaxation, formation of a narrow metal/O reaction zone spreading in the metal and being characterized by oxygen concentration gradient occurred. The reaction zone exhibits high hardness and brittleness in comparison with those of pure metals.
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Faina Muktepavela, Faina Muktepavela, } "Mechano-activated processes on metal oxide interfaces at room temperature", Proc. SPIE 2967, Optical Inorganic Dielectric Materials and Devices, (4 February 1997); doi: 10.1117/12.266522; https://doi.org/10.1117/12.266522
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