4 February 1997 Monograin layers as optoelectronic devices
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Proceedings Volume 2967, Optical Inorganic Dielectric Materials and Devices; (1997) https://doi.org/10.1117/12.266538
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia
The possibility is demonstrated to manufacture by the recrystallization of initial powders in different molten fluxes different A2B6 powders with the qualities acceptable for monograin layer construction. Several technologies of formation of monograin layers and optoelectronic devices were developed and studied. It is shown, that insufficient electronic parameters of semiconductor sensors and solar cells designed as monograin layers are connected with the insufficient cleaning of surfaces of crystals in the monograin layer.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Enn Mellikov, Enn Mellikov, Dieter Meissner, Dieter Meissner, Tiit Varema, Tiit Varema, Jaan Hiie, Jaan Hiie, Mare Altosaar, Mare Altosaar, "Monograin layers as optoelectronic devices", Proc. SPIE 2967, Optical Inorganic Dielectric Materials and Devices, (4 February 1997); doi: 10.1117/12.266538; https://doi.org/10.1117/12.266538

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