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4 February 1997 Photostimulated processes in the CsI-Tl crystal after UV irradiation
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Proceedings Volume 2967, Optical Inorganic Dielectric Materials and Devices; (1997) https://doi.org/10.1117/12.266519
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia
Abstract
The photostimulated luminescence is studied for CsI-Tl crystal after irradiation with ultraviolet light in the 80 - 300 K temperature range. The PSL creation spectrum coincides with the D absorption band at 80 K. Three bands are observed in the stimulation spectra at 80 K: 1400, 950, and 600 nm. The 1400 and 950 nm stimulation bands are presumably explained as optical transitions in the Tl0 and Vk centers situated in the spatial correlated pairs. The stimulation at 600 nm band is ascribed to the unperturbed Tl0 centers.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. A. Chernov, L. Trinkler, and Anatoli I. Popov "Photostimulated processes in the CsI-Tl crystal after UV irradiation", Proc. SPIE 2967, Optical Inorganic Dielectric Materials and Devices, (4 February 1997); https://doi.org/10.1117/12.266519
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