6 February 1997 Photoconductivity formation in CdTe in the annealing process
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Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997) https://doi.org/10.1117/12.266820
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia
Results on the influence of annealing in vacuum and in Te vapors to the dark and light resistance's (RD and RL) of CdTe:Cl miniature crystals (300 - 400 micrometer) of monograin powders is reported and discussed. The dark to light resistance ratio 105 (RD equals 1011 (Omega) ) at incandescent light intensity of 104 1x at room temperature have been obtained for 400 micrometer size CdTe:Cl round-shape monograins. Process of annealing was found to shrink the porous structure of as-grown CdTe monograins and to smooth the crystal surfaces.
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Jaan Hiie, Jaan Hiie, Vello Valdna, Vello Valdna, Enn Mellikov, Enn Mellikov, Mare Altosaar, Mare Altosaar, } "Photoconductivity formation in CdTe in the annealing process", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); doi: 10.1117/12.266820; https://doi.org/10.1117/12.266820

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