Photoconductivity of a semiconductor with anisotropic electroconductivity in a nonhomogeneous electric field

Arthur Medvids; V. Frishfelds

doi:10.1117/12.266819

6 February 1997 Photoconductivity of a semiconductor with anisotropic electroconductivity in a nonhomogeneous electric field

Arthur Medvids, V. Frishfelds

Author Affiliations +

Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997) https://doi.org/10.1117/12.266819
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia

Abstract

The kinetics of photoconductivity and the spectral photosensitivity of a semiconductor with anisotropic electroconductivity in nonhomogeneous electric field has been investigated. Photoconductivity of germanium samples of ring geometry was studied experimentally and theoretically. The main results are: decay of the photocurrent in a semiconductor in the presence of a transverse gradient of electric field differs from the exponential one and depends on mutual directions of the gradient and the drift of the carriers; a photodetector with parameters reversibly controlled by electric and magnetic fields is possible. It was found that spectral photosensitivity either selective or bolometric depending on mutual directions of incident light, the gradient of electric field, and of drift of carriers.

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Arthur Medvids and V. Frishfelds "Photoconductivity of a semiconductor with anisotropic electroconductivity in a nonhomogeneous electric field", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); https://doi.org/10.1117/12.266819

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