6 February 1997 Photoemf of hot carriers in nonuniform GaAs
Author Affiliations +
Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997) https://doi.org/10.1117/12.266815
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia
We report the results of a study of photovoltage which is generated on p-n and l-h GaAs structures under pulsed infrared laser excitation. The hot carrier photocurrent reaches its maximum value at bias voltage related to potential barrier height of p-n junction. We demonstrate that the photoresponse consists of fast and slow components which result from free-carrier and crystal lattice heating, respectively. The obtained results indicate that nonuniform GaAs structures can be used for fabrication of fast detectors based on free-carrier heating by infrared light.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steponas P. Asmontas, Jonas Gradauskas, Dalius Seliuta, A. Silenas, Edmundas Sirmulis, "Photoemf of hot carriers in nonuniform GaAs", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); doi: 10.1117/12.266815; https://doi.org/10.1117/12.266815


Fast infrared detectors based on nonuniform semiconductors
Proceedings of SPIE (August 08 2003)
Infrared Fiber Early Warning Receiver
Proceedings of SPIE (December 17 1982)
Y Ba Cu O thin films as high speed IR...
Proceedings of SPIE (October 01 1990)
Spatial response of infrared antennas
Proceedings of SPIE (July 22 1998)

Back to Top