6 February 1997 Photoemf of hot carriers in nonuniform GaAs
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Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997) https://doi.org/10.1117/12.266815
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia
Abstract
We report the results of a study of photovoltage which is generated on p-n and l-h GaAs structures under pulsed infrared laser excitation. The hot carrier photocurrent reaches its maximum value at bias voltage related to potential barrier height of p-n junction. We demonstrate that the photoresponse consists of fast and slow components which result from free-carrier and crystal lattice heating, respectively. The obtained results indicate that nonuniform GaAs structures can be used for fabrication of fast detectors based on free-carrier heating by infrared light.
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Steponas P. Asmontas, Jonas Gradauskas, Dalius Seliuta, A. Silenas, Edmundas Sirmulis, "Photoemf of hot carriers in nonuniform GaAs", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); doi: 10.1117/12.266815; https://doi.org/10.1117/12.266815
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